smd type ic smd type ic features dual chip type low on-state resistance r ds(on)1 =27m typ. (v gs =10v,i d =3.5a) r ds(on)2 =32m typ. (v gs =4.5v,i d =3.5a) r ds(on)3 =34m typ. (v gs =4.0v,i d =3.5a) low input capacitance c iss = 1300 pf typ. built-in g-s protection diode small and surface mount package absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage (v gs =0) v dss 60 v gate to source voltage (v ds =0) v gss 20 v drain current (dc) i d(dc) 7 a drain current (pulse) *1 i d (pulse) 28 a total power dissipation (1 unit) *2 p t 1.7 w total power dissipation (2 unit) *2 p t 2.0 w channel temperature t ch 150 storage temperature t stg -55to+150 single avalanche current *3 i as 7a single avalanche energy *3 e as 98 mj *1 pw 10 s, duty cycle 1% *2 mounted on ceramic substrate of 2000 mm 2 x1.1 mm *3 starting t ch =25 ,v dd =30v,r g =25 ,v gs =20 0v 1 : source 1 2:gate1 7, 8 : drain 1 3 : source 2 4:gate2 5, 6 : drain 2 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type ic KPA1764 product specification
smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit zero gate voltage drain current i dss v ds =60v,v gs =0 10 a gate leakage current i gss v gs = 20 v, v ds =0 10 a gate cut-off voltage v gs(off) v ds =10v,i d = 1 ma 1.5 2.0 2.5 v forward transfer admittance | y fs |v ds =10v,i d = 3.5 a 5.0 9 s r ds(on)1 v ds =10v,i d =3.5a 27 35 m r ds(on)2 v gs =4.5v,i d =3.5a 32 42 m r ds(on)3 v gs =4.0v,i d =3.5a 34 46 m input capacitance c iss 1300 pf output capacitance c oss 230 pf reverse transfer capacitance c rss 110 pf turn-on delay time t d(on) 15 ns rise time t r 69 ns turn-off delay time t d(off) 65 ns fall time t f 27 ns total gate charge q g 29 nc gate to source charge q gs 3.6 nc gate to drain charge q gd 7.4 nc body diode forward voltage v f(s-d) i f =7.0a,v gs = 0 0.84 v reverse recovery time trr i f =7.0a,v gs =0v 40 ns reverse recovery charge qrr d i /d t = 100 a/ s 66 nc v ds =10v,v gs =0,f=1mhz i d =7.0a,v dd = 48v, v gs =10v i d =3.5a,v gs =10v,v dd =30 v,r g = 10 drain to source on-state resistance KPA1764 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification
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